Transistor

Transistor

Reddi
Bipolar junction transistors The invention relates to a transistor and in particular to a transistor comprising a semi-conductive body of N-type germanium. Transistors generally comprise at least three electrodes, two of which, the emitter and the collector, constitute rectifying connections to the semi-conductive body, and the third of which, the base contact, constitutes an ohmic connection to the body. The invention is concerned with those transistors wherein at least the emitter is constituted of an alloy containing one or more of the following metals; bismuth, indium, lead, thallium and/or tin; and, if desired, in addition some germanium. A very frequently used method for making the emitter and the collector, known as the alloying method, consists in fusing to the N-type semi-conductive body a small quantity of an alloy containing an acceptor impurity, i.e., an element producing acceptors in the semi-conductive body, so that at the fused area a regrown semi-conductive region or layer of P-type conductivity can be produced
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